Potential Induced Degradation Effect on n-Type Solar Cells with Boron Emitter

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU124140" target="_blank" >RIV/00216305:26220/17:PU124140 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Potential Induced Degradation Effect on n-Type Solar Cells with Boron Emitter
Original language description
This study is focusing on Potential Induced Degradation (PID) effect on n-type solar cells with boron emitter. We designed and fabricated single cell modules using n-PERT cells with textured and flat front side, and with various passivation structures on the front side to prevent PID at the cell level. The modules were characterized before and after PID testing by electroluminescence (EL), IV measurements, reflection and Internal Quantum Efficiency (IQE). Measurements were done on both sides of module to obtain whether the degradation was going on the front side, rear side or both. Comparison of IQE of front vs rear side shows, that intensity of degradation is fully influenced by properties of the front side of antireflection and passivation (ARC) layer.
Czech name
—
Czech description
—

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 23rd Conference STUDENT EEICT 2017
ISBN
978-80-214-5496-5
ISSN
—
e-ISSN
—
Number of pages
5
Pages from-to
517-521
Publisher name
Neuveden
Place of publication
Neuveden
Event location
Brno
Event date
Apr 27, 2017
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
—

Similar results(10)