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CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU134689" target="_blank" >RIV/00216305:26220/17:PU134689 - isvavai.cz</a>

  • Result on the web

    <a href="https://ieeexplore.ieee.org/document/7969065" target="_blank" >https://ieeexplore.ieee.org/document/7969065</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/RFIC.2017.7969065" target="_blank" >10.1109/RFIC.2017.7969065</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

  • Original language description

    In this work, a high voltage (HV) galvanically isolated chip-to-chip communication circuit utilizing laterally coupled resonators is reported. The adjacently placed resonators provide high voltage galvanic isolation (GI) using horizontal space between resonators filled with oxide, which minimizes the need for thick inter-metal dielectrics. A previously unexplored application for lateral coupling is introduced as a passive communication channel for GIs. Magnetic coupling between resonators is used to transfer an upconverted digitally-modulated OOK control signal at 2.8 GHz through the galvanic isolator. This proposed method can be integrated using CMOS processes, without altering the native process or adding extra fabrication steps. The system is realized in a 0.25 μm BCD (Bipolar-CMOS-DMOS) process with only four metal layers for proof of concept. The design does not require exotic packaging and provides 3.3 kV RMS isolation, small physical area of 0.95 mm 2 , and sub-20 ns propagation delay. The implemented resonators inherently act as bandpass filters, thus enhancing circuit noise immunity to common mode transients.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

  • ISBN

    978-1-5090-4626-3

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    252-255

  • Publisher name

    IEEE

  • Place of publication

    Piscataway

  • Event location

    Honolulu

  • Event date

    Jun 4, 2017

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000426956400064