Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU127578" target="_blank" >RIV/00216305:26220/18:PU127578 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1134/S1063739718020026" target="_blank" >http://dx.doi.org/10.1134/S1063739718020026</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063739718020026" target="_blank" >10.1134/S1063739718020026</a>

Result language

angličtina

Original language name

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Original language description

In this work aluminum nitride (AlN) thin films were deposited by atomic layer deposition (ALD) technique using tris(diethylamido)aluminum (III) (TDEAA) with ammonia (NH3) or hydrazine (N2H4). Two different nitrogen sources were used to conduct comparative study AlN ALD using TDEAA/NH3 and TDEAA/N2H4. For these two systems, deposition was carried out at rector temperatures between 150 to 290 °C. In situ quartz crystal microbalance (QCM) measurements conducted between 160 to 225 °C suggested that surface reactions between TDEAA and NH3 or N2H 4 are self-limiting. At all examined temperatures hydrazine needed smaller doses to reach saturation than ammonia. Ex situ thin film analysis techniques such as x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), and forward recoil spectroscopy (FReS) were used to examine resulted films. The optimal deposition temperature for both systems were found to be between 200 to 225 °C where highest films density and rate of growth was found. At the same temperature conditions, films deposited using N2H4 exhibited higher films density and higher oxidation resistant, compare to the films deposited using NH3. Elemental analysis of the balk of the film deposited at 225 °C with N2H4 showed a small amount of carbon ~ 1.8 at. % and ~ 3.9 at. % of oxygen. FReS analysis of AlN films deposited with NH3 and N2H4 indicated presence of ~ 25 at. % of hydrogen. This hydrogen believe to be present in the deposited films as unreacted methyl, amine (-NH) and/or amide (-NH2) groups which could be potentially removed by annealing. Overall, N2H4 showed more favorable surface chemistry for AlN ALD compare to NH3 film with higher density and lower sensitivity to oxidation.

Czech name

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Czech description

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Type

J_SC - Article in a specialist periodical, which is included in the SCOPUS database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Russian Microelectronics

ISSN

1063-7397

e-ISSN

1608-3415

Volume of the periodical

47

Issue of the periodical within the volume

2

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

13

Pages from-to

118-130

UT code for WoS article

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EID of the result in the Scopus database

2-s2.0-85044930196