Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU141675" target="_blank" >RIV/00216305:26220/18:PU141675 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors
Original language description
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(diethylamido)aluminum (III) (TDEAA) with hydrazine (N2H4) or ammonia (NH3) as precursors. Elemental analysis of the film deposited by ALD TDEAA /N2H4 at 200 °C showed the presence of carbon impurities ~ 1.4 at%, oxygen ~ 3.2 at.% and hydrogen 22.6 at.%. The atomic concentration ratio of N/Al was ~ 1.3. The residual impurities content with N2H4 was lower than with NH3. In general, it has been confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů