How topographical surface parameters are correlated with CdTe monocrystal surface oxidation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU128055" target="_blank" >RIV/00216305:26220/18:PU128055 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S1369800118303639" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800118303639</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2018.05.030" target="_blank" >10.1016/j.mssp.2018.05.030</a>
Alternative languages
Result language
angličtina
Original language name
How topographical surface parameters are correlated with CdTe monocrystal surface oxidation
Original language description
Numerical analysis was applied to three-dimensional (3D) images for a quantitative description of evolution of surface topography of CdTe after oxidation. The results of fractal analysis show the correlation of fractal dimension and statistical characteristics of surface topography. Surface texture analysis provides dependence of topography characteristics on oxidation process. The comprehensive description of the surface micromorphology of the CdTe is an important challenge and it is essential for understanding their properties and their potential technological exploitation. The changes in surface topography were evaluated by atomic force microscopy (AFM). This characterization was carried out for the quantitative analysis of specific microstructural characteristics of samples.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN
1369-8001
e-ISSN
1873-4081
Volume of the periodical
neuveden
Issue of the periodical within the volume
85
Country of publishing house
GB - UNITED KINGDOM
Number of pages
9
Pages from-to
15-23
UT code for WoS article
000436649200003
EID of the result in the Scopus database
2-s2.0-85047746746