Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU132039" target="_blank" >RIV/00216305:26220/19:PU132039 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

Original language description

The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the 25 th Conference STUDENT EEICT 2019

ISBN

978-80-214-5735-5

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

704-709

Publisher name

Neuveden

Place of publication

Neuveden

Event location

Brno

Event date

Apr 25, 2019

Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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