Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU134740" target="_blank" >RIV/00216305:26220/19:PU134740 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8810156" target="_blank" >https://ieeexplore.ieee.org/document/8810156</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE.2019.8810156" target="_blank" >10.1109/ISSE.2019.8810156</a>
Alternative languages
Result language
angličtina
Original language name
Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications
Original language description
We presented the development and characterization of high-k stack HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminate material directly grown by plasma-assisted Atomic Layer Deposition (ALD) in a single reactor chamber. The deposition process was performed at a single temperature (250°C). We tested the various numbers of layers in the stack, compared the electrical and material characterizations. Using the optimal deposition conditions, we obtained a structure with nanolaminates of single thickens 5Å, capacitance density of 1.10-12 F.μm-2 and leakage current density of 1.10-9 A.cm-2
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
42st International Spring Seminar on Electronics Technology ISSE2019
ISBN
978-1-7281-1874-1
ISSN
2161-2536
e-ISSN
—
Number of pages
4
Pages from-to
1-4
Publisher name
IEEE Computer Society
Place of publication
Poland
Event location
Wroclaw
Event date
May 15, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000507501000004