ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU129470" target="_blank" >RIV/00216305:26220/18:PU129470 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ISSE.2018.8443766" target="_blank" >http://dx.doi.org/10.1109/ISSE.2018.8443766</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE.2018.8443766" target="_blank" >10.1109/ISSE.2018.8443766</a>
Alternative languages
Result language
angličtina
Original language name
ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization
Original language description
Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
41st International Spring Seminar on Electronics Technology ISSE2018
ISBN
9781538657317
ISSN
2161-2528
e-ISSN
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Number of pages
5
Pages from-to
1-5
Publisher name
IEEE Computer Society
Place of publication
Serbia
Event location
Zlatibor
Event date
May 16, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000449866600087