Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146229" target="_blank" >RIV/00216305:26220/22:PU146229 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mtcomm.2022.104664" target="_blank" >10.1016/j.mtcomm.2022.104664</a>

Result language
angličtina
Original language name
Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates
Original language description
High-kappa dielectric materials are commonly used in microelectronic components due to the technological necessity of increasing the capacitance density of dielectric layers. The thickness of the layer is a crucial parameter of this technology because it has a significant influence on dielectric properties, capacitance density, leakage current density-voltage (J-V), breakdown voltage, and capacitance density-voltage (C-V). Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. Thus, in this study, devices are fabricated by atomic layer deposition (ALD) processes on Si wafer. Properties of HfO2/Al2O3-based stack dielectric as on-chip MIS capacitors are investigated. The capacitance density, C-V, J-V, impedance characteristics, equivalent dielectric constant, breakdown voltage, and leakage current are studied on stacks (HfO2/Al2O3) with a thickness ratio of 1:1. The experimental results indicate very good leakage current and good breakdown voltage. Oxygen vacancies play a significant role in increasing the conductance and contrarily decreasing the equivalent dielectric constant of the stack.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20500 - Materials engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)