How to Design Enhanced LDO by the Other Way

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU134928" target="_blank" >RIV/00216305:26220/19:PU134928 - isvavai.cz</a>
Result on the web
<a href="http://theconnection.onsemi.com/corprnd/LP/dst/sharetech/EngForum/ETF-2019/default.aspx" target="_blank" >http://theconnection.onsemi.com/corprnd/LP/dst/sharetech/EngForum/ETF-2019/default.aspx</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
How to Design Enhanced LDO by the Other Way
Original language description
New Intelligent systems require high efficient, fast response and excellently behaving power supply devices. Although Low Dropout Voltage Regulators (LDO) have been very known devices for many tens of years, getting new challenges of their operating applications require also a new approach in design. Low Dropout Voltage regulators belong to the linear systems. True LDO regulaters can achieve much lower Vin-Vout drop voltage than Vth (MOS) or Vbe (BJT). Linear regulators drive MOSFET or BJT power device at their outputs so that the whole circuit behaves like a variable resistor. In the history N type power transistors were preffered to P type due to their fundamental advantages. Nevertheless, P type LDOs are dominant nowadays. To design a real LDO with N type transistor there is neccessarry to use dual supply rails in the system. How to comprise advantages of a single supply rail with NMOS output topoogy? It is possible by implementing an inner charge pump system providing internal auxiliary bias itsel
Czech name
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Czech description
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Publication year
2019
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

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