Optimization of Tungsten Anodization for Thin WO₃ Layers for Aplication in Cold Field Emission Cathodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU154774" target="_blank" >RIV/00216305:26220/24:PU154774 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Optimization of Tungsten Anodization for Thin WO₃ Layers for Aplication in Cold Field Emission Cathodes
Original language description
This study focuses on optimizing the anodization process for producing high-quality tungsten oxide (WO₃) layers on tungsten substrates to enhance cold field emission (CFE) cathode performance. Tungsten samples were anodized in a 0.3 M H₃PO₄ electrolyte solution, with voltage and duration systematically varied to control oxide layer thickness, roughness, and chemical composition. Advanced surface characterization techniques, including XPS, AFM, and SEM, were used to evaluate the layers. Results indicate that anodization at 7.5–12.5 V for 10 minutes yields WO₃-rich layers with low roughness, suitable for stable dielectric barriers to improve electron tunneling. These findings support the potential of anodized WO₃ layers in high-performance CFE applications.
Czech name
—
Czech description
—

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)