Nanometer - Thick titanium film as a silicon migration barrier

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0189885" target="_blank" >RIV/00216305:26220/26:0189885 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S2352492824013072" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492824013072</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mtcomm.2024.109326" target="_blank" >10.1016/j.mtcomm.2024.109326</a>

Result language
angličtina
Original language name
Nanometer - Thick titanium film as a silicon migration barrier
Original language description
Diffusion of silicon atoms to the topmost film surface poses significant challenges in various technological applications. In an effort to address this issue, titanium films with varying thicknesses were deposited on a silicon substrate to evaluate the efficacy of a thin titanium barrier film in blocking silicon migration to the upper film surface. Subsequently, the films were subjected to a 1-hour heating process in air at an oxidizing temperature of 430 K. Atomic force microscopy and Raman spectroscopy were employed to characterize the morphological and structural changes among the investigated films. X-ray photoelectron spectroscopy was utilized to explore variations in chemical composition, determine oxidation states, and measure the thicknesses of the thin titanium oxide layers. The findings revealed that titanium films with a thickness < 50 nm experienced silicon diffusion to their upper film surface. Moreover, an increase in the thickness of the oxide layers over the titanium film on the silicon substrate significantly reduced the migration of silicon to the titanium film surface. At 430 K, the study found that oxide layers at least 6.87 nm thick formed on a 35-nm thick titanium layer, which together successfully prevented silicon migration to the top surface of the film.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20500 - Materials engineering

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)