Nanometer – Thick titanium film as a silicon migration barrier
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F24%3A00588536" target="_blank" >RIV/68081723:_____/24:00588536 - isvavai.cz</a>
Alternative codes found
RIV/68081731:_____/24:00588536 RIV/00216305:26220/24:PU152368
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S2352492824013072" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492824013072</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mtcomm.2024.109326" target="_blank" >10.1016/j.mtcomm.2024.109326</a>
Alternative languages
Result language
angličtina
Original language name
Nanometer – Thick titanium film as a silicon migration barrier
Original language description
Diffusion of silicon atoms to the topmost film surface poses significant challenges in various technological applications. In an effort to address this issue, titanium films with varying thicknesses were deposited on a silicon substrate to evaluate the efficacy of a thin titanium barrier film in blocking silicon migration to the upper film surface. Subsequently, the films were subjected to a 1-hour heating process in air at an oxidizing temperature of 430 K. Atomic force microscopy and Raman spectroscopy were employed to characterize the morphological and structural changes among the investigated films. X-ray photoelectron spectroscopy was utilized to explore variations in chemical composition, determine oxidation states, and measure the thicknesses of the thin titanium oxide layers. The findings revealed that titanium films with a thickness < 50 nm experienced silicon diffusion to their upper film surface. Moreover, an increase in the thickness of the oxide layers over the titanium film on the silicon substrate significantly reduced the migration of silicon to the titanium film surface. At 430 K, the study found that oxide layers at least 6.87 nm thick formed on a 35-nm thick titanium layer, which together successfully prevented silicon migration to the top surface of the film.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/LM2023051" target="_blank" >LM2023051: Research infrastructure CzechNanoLab</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Today Communications
ISSN
2352-4928
e-ISSN
2352-4928
Volume of the periodical
40
Issue of the periodical within the volume
August
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
17
Pages from-to
109326
UT code for WoS article
001325538400001
EID of the result in the Scopus database
2-s2.0-85195254609