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Nanometer – Thick titanium film as a silicon migration barrier

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F24%3A00588536" target="_blank" >RIV/68081723:_____/24:00588536 - isvavai.cz</a>

  • Alternative codes found

    RIV/68081731:_____/24:00588536 RIV/00216305:26220/24:PU152368

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S2352492824013072" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492824013072</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.mtcomm.2024.109326" target="_blank" >10.1016/j.mtcomm.2024.109326</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Nanometer – Thick titanium film as a silicon migration barrier

  • Original language description

    Diffusion of silicon atoms to the topmost film surface poses significant challenges in various technological applications. In an effort to address this issue, titanium films with varying thicknesses were deposited on a silicon substrate to evaluate the efficacy of a thin titanium barrier film in blocking silicon migration to the upper film surface. Subsequently, the films were subjected to a 1-hour heating process in air at an oxidizing temperature of 430 K. Atomic force microscopy and Raman spectroscopy were employed to characterize the morphological and structural changes among the investigated films. X-ray photoelectron spectroscopy was utilized to explore variations in chemical composition, determine oxidation states, and measure the thicknesses of the thin titanium oxide layers. The findings revealed that titanium films with a thickness < 50 nm experienced silicon diffusion to their upper film surface. Moreover, an increase in the thickness of the oxide layers over the titanium film on the silicon substrate significantly reduced the migration of silicon to the titanium film surface. At 430 K, the study found that oxide layers at least 6.87 nm thick formed on a 35-nm thick titanium layer, which together successfully prevented silicon migration to the top surface of the film.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

    <a href="/en/project/LM2023051" target="_blank" >LM2023051: Research infrastructure CzechNanoLab</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Today Communications

  • ISSN

    2352-4928

  • e-ISSN

    2352-4928

  • Volume of the periodical

    40

  • Issue of the periodical within the volume

    August

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    17

  • Pages from-to

    109326

  • UT code for WoS article

    001325538400001

  • EID of the result in the Scopus database

    2-s2.0-85195254609