Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0198661" target="_blank" >RIV/00216305:26220/26:0198661 - isvavai.cz</a>
Result on the web
<a href="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf" target="_blank" >https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2025_sbornik_1.pdf</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Effects of gate boosting on gate oxide reliability and lifetime estimation of commercially available MOSFETs
Original language description
This paper presents a method of estimating gate oxide reliability and lifetime of commercially available MOSFETs. The estimation is calculated for the specific condition that is present when gate boosting is used as a gate driving method. The effects of overvoltage are presented as well as calculation of the expected lifetime of a MOSFET when gate boosting is used.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings I of the 31st Conference STUDENT EEICT 2025
ISBN
978-80-214-6321-9
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
266-270
Publisher name
Brno University of Technology, Faculty of Elektronic Engineering and Communication
Place of publication
Brno
Event location
Brno
Event date
Apr 29, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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