Non-epitaxial integration of strain-tuned polycrystalline BiFeO3 thin films for silicon-based optoelectronics

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0200633" target="_blank" >RIV/00216305:26220/26:0200633 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0925346725009371?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0925346725009371?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2025.117577" target="_blank" >10.1016/j.optmat.2025.117577</a>

Result language

angličtina

Original language name

Non-epitaxial integration of strain-tuned polycrystalline BiFeO3 thin films for silicon-based optoelectronics

Original language description

Integrating thin bismuth ferrite films with silicon-based platforms offers a promising path for advanced optoelectronic devices. This work investigates how oxygen partial pressure during pulsed laser deposition governs the structure, microstructure, defect chemistry, and optical properties of BiFeO3 films grown on Ti-buffered Si. Diffraction and microscopy confirm single-phase rhombohedral perovskite and indicate that the oxygen background tunes the lattice strain states and vacancy proxies. The lower-pressure film exhibits partial relaxed strain, finer grains, and a smaller oxygen-defect fraction, whereas the moderate-pressure film shows stronger tensile lattice strain, rougher grains, and a higher vacancy level. Spectroscopic ellipsometry results, analyzed with a multilayer model that includes buried Ti and TiOx interlayers, reveals distinct differences in dielectric dispersion and absorption edges. The lower-pressure film displays direct and indirect bandgaps of about 2.61 and 2.25 eV, while the moderate-pressure film shows slightly larger values of about 2.68 and 2.32 eV. These shifts are consistent with coupled variations in strain and oxygen-related disorder that modulate Fe-O bond lengths and hybridization. Overall, the results demonstrate that pressure-controlled strain and defect engineering can tailor light-matter interaction in Si-integrated BiFeO3 films for photonic and optoelectronic applications.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

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Continuities

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Publication year

2026

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Optical materials

ISSN

0925-3467

e-ISSN

1873-1252

Volume of the periodical

169

Issue of the periodical within the volume

1

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

9

Pages from-to

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UT code for WoS article

001591437700001

EID of the result in the Scopus database

2-s2.0-105017734178