Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0201239" target="_blank" >RIV/00216305:26220/26:0201239 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsomega.5c08852" target="_blank" >https://pubs.acs.org/doi/10.1021/acsomega.5c08852</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsomega.5c08852" target="_blank" >10.1021/acsomega.5c08852</a>
Alternative languages
Result language
angličtina
Original language name
Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon
Original language description
Achieving the reliable integration of bismuth ferrite with silicon requires precise control over phase formation, cation stoichiometry, and near-surface oxygen chemistry. In this study, BiFeO3 films were deposited by pulsed laser deposition onto Ti- and TiO2-buffered Si substrates under varied oxygen partial pressures and substrate temperatures. Structural, morphological, and chemical evolutions were investigated using X-ray diffraction, scanning electron microscopy, and combined survey and high-resolution X-ray photoelectron spectroscopy. Both buffer types yield polycrystalline BiFeO3 films; Ti-buffered samples exhibit lower variations in Bi/Fe surface ratios, whereas TiO2buffered films show a reduced contribution from hydroxyl-related oxygen species at the surface. X-ray photoelectron spectroscopy confirms that Bi and Fe remain exclusively in the trivalent state under all growth conditions. High-resolution oxygen spectra demonstrate that oxygen chemistry is the most sensitive indicator of near-surface disorder, reflecting contributions from lattice oxygen and surface hydroxylation arising from ambient exposure. Minor Bi2O3 phases persist across the investigated deposition window; however, their evolution, together with surface oxygen trends, indicates that intermediate-to-high substrate temperatures combined with moderate-to-low oxygen pressures provide the most favorable conditions for stabilizing near-stoichiometric BiFeO3. Overall, the results highlight oxide buffer layers as effective regulators of surface chemistry, enabling a scalable route for integrating BiFeO3 films on silicon.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2026
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Omega
ISSN
2470-1343
e-ISSN
2470-1343
Volume of the periodical
11
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
14
Pages from-to
7782-7795
UT code for WoS article
001674311200001
EID of the result in the Scopus database
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