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Anisotropic film construction using plasma nanotechnology (atomic polymerization)

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F10%3APU90078" target="_blank" >RIV/00216305:26310/10:PU90078 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Anisotropic film construction using plasma nanotechnology (atomic polymerization)

  • Original language description

    Bilayers consisting of a-SiC:H and a-SiOC:H alloys were deposited on silicon wafer using plasma-enhanced chemical vapor deposition (PECVD). The layered structures were subjected to ellipsometric measurements that enabled us to distinguish individual layers and determine the layer thickness and its optical constants. In next study, single layer and multilayered a-SiC:H films, deposited from tetravinylsilane at different powers by PECVD, were investigated intensively by spectroscopic ellipsometry, nanoindentation, and atomic force microscopy (AFM) to compare optical and mechanical properties of the individual layer of decreased thickness (315 - 25 nm) with those of the corresponding single layer.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    CF - Physical chemistry and theoretical chemistry

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů