Anisotropic film construction using plasma nanotechnology (atomic polymerization)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F10%3APU90078" target="_blank" >RIV/00216305:26310/10:PU90078 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Anisotropic film construction using plasma nanotechnology (atomic polymerization)
Original language description
Bilayers consisting of a-SiC:H and a-SiOC:H alloys were deposited on silicon wafer using plasma-enhanced chemical vapor deposition (PECVD). The layered structures were subjected to ellipsometric measurements that enabled us to distinguish individual layers and determine the layer thickness and its optical constants. In next study, single layer and multilayered a-SiC:H films, deposited from tetravinylsilane at different powers by PECVD, were investigated intensively by spectroscopic ellipsometry, nanoindentation, and atomic force microscopy (AFM) to compare optical and mechanical properties of the individual layer of decreased thickness (315 - 25 nm) with those of the corresponding single layer.
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
—
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů