Mechanical properties of a-SiC:H films: an influence of surface topography on nanoindentation measurements
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F16%3APU122523" target="_blank" >RIV/00216305:26310/16:PU122523 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Mechanical properties of a-SiC:H films: an influence of surface topography on nanoindentation measurements
Original language description
Hydrogenated amorphous silicon-carbon films were prepared on polished silicon wafers from a tetravinylsilane precursor via plasma-enhanced chemical vapor deposition. The grain structure was developed at the film surface using high powers (50-70 W), as observed by atomic force microscopy (AFM). Conventional and cyclic nanoindentation measurements revealed different mechanical responses for indentation into and outside of the selected isolated grain with a spherical cap geometry with a radius greater than that of the indenter (50 nm). The finite element method was employed to simulate the behavior of the grain under deformation by an indenter to correctly interpret the nanoindentation data. Scanning probe measurements using Modulus Mapping (dynamic mechanical analysis) and atomic force acoustic microscopy confirmed that the surface topography had a critical influence on the determined mechanical properties, which were significantly underestimated. Our experimental and simulation study demonstrates that
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů