Thin Films of Tetravinylsilane Characterized by Spectroscopic Ellipsometry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU124875" target="_blank" >RIV/00216305:26310/17:PU124875 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Thin Films of Tetravinylsilane Characterized by Spectroscopic Ellipsometry
Original language description
We prepared thin films from vapor of tetravinylsilane (TVS) monomer using plasma-enhanced chemical vapor deposition (PECVD) with a process gas pressure of 2.7 Pa at a monomer flow rate of 3.8 sccm. Thin films were deposited at different powers using continuous wave (10-70 W) and pulsed (2-150 W) plasmas (13.56 MHz). In situ phase-modulated spectroscopic ellipsometer (UVISEL, Jobin-Yvon) operated in range 250-830 nm was used to determine the film thickness and optical properties like refractive index and extinction coefficient in a form of dispersion curves. For a selected wavelength of 633 nm, the refractive index increased from 1.7 to 2.3 and the extinction coefficient was ranging from 0 to 0.15 with enhanced power. The dielectric function of films evaluated by spectroscopic ellipsometry was fitted by Tauc-Lorentz formula to determine the band gap, which decreased from 2.7 eV (2 W) to 0.7 eV (150 W) with enhanced power. The optical properties of films dependent on the power were similar for continuou
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů