Optical Properties of a-SiC:H Films Controlled by RF Power
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU126313" target="_blank" >RIV/00216305:26310/17:PU126313 - isvavai.cz</a>
Result on the web
<a href="https://www.mff.cuni.cz/veda/konference/wds/proc/proc-contents.php?year=2017" target="_blank" >https://www.mff.cuni.cz/veda/konference/wds/proc/proc-contents.php?year=2017</a>
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Optical Properties of a-SiC:H Films Controlled by RF Power
Original language description
Plasma-enhanced chemical vapor deposition operated in two modes (continuous wave (10-70 W) and pulsed plasma (2-150 W)) was employed to prepare hydrogenated amorphous carbon-silicon (a-SiC:H) films from tetravinylsilane monomer. Optical properties of a-SiC:H films were analyzed by in situ phase modulated spectroscopic ellipsometer (UVISEL, Jobin-Yvon). The dispersion dependence of the dielectric function was fitted by the Tauc-Lorentz formula to determine the RF-power-dependent refractive index, extinction coefficient, and band gap.
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
<a href="/en/project/GA16-09161S" target="_blank" >GA16-09161S: Synthesis of multifunctional plasma polymers for polymer composites without interfaces</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů