Polycrystalline Silicon Layers with Enhanced Thermal Stability

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F11%3APU97280" target="_blank" >RIV/00216305:26620/11:PU97280 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Polycrystalline Silicon Layers with Enhanced Thermal Stability

Original language description

We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films of a few nanometer thicknesses significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used scanning electron microscopy and transmission electron microscopy for the characterization of the multilayer system, and intentional contamination for demonstration of the gettering properties.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid State Phenomena

ISSN

1662-9779

e-ISSN

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Volume of the periodical

178-179

Issue of the periodical within the volume

385

Country of publishing house

CH - SWITZERLAND

Number of pages

6

Pages from-to

385-391

UT code for WoS article

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EID of the result in the Scopus database

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