Polycrystalline silicon layers with enhanced thermal stability

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F11%3A%230000028" target="_blank" >RIV/26821532:_____/11:#0000028 - isvavai.cz</a>
Result on the web
<a href="http://www.scientific.net/SSP.178-179.385" target="_blank" >http://www.scientific.net/SSP.178-179.385</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.385" target="_blank" >10.4028/www.scientific.net/SSP.178-179.385</a>

Result language
angličtina
Original language name
Polycrystalline silicon layers with enhanced thermal stability
Original language description
We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination fordemonstration of gettering properties.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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