Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43923317" target="_blank" >RIV/49777513:23640/14:43923317 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssa.201330231" target="_blank" >http://dx.doi.org/10.1002/pssa.201330231</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201330231" target="_blank" >10.1002/pssa.201330231</a>

Result language
angličtina
Original language name
Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction
Original language description
We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasma-enhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 °C annealing temperature, independent of the a-Si:H sublayer thickness.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JJ - Other materials
OECD FORD branch
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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