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Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916611" target="_blank" >RIV/49777513:23640/12:43916611 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

  • Original language description

    In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formationof Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT -SREN III

  • ISBN

    978-80-223-3212-5

  • ISSN

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

    97-98

  • Publisher name

    Univerzita Komenského Bratislava

  • Place of publication

    Bratislava

  • Event location

    Florence, Italie

  • Event date

    May 14, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article