Structural Analysis of Silicon Nanostructures Obtained from Thermal Annealing of a-Si:H/SiO2 Superlattices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F14%3A43923247" target="_blank" >RIV/49777513:23640/14:43923247 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.295" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/KEM.605.295</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.295" target="_blank" >10.4028/www.scientific.net/KEM.605.295</a>

Result language
angličtina
Original language name
Structural Analysis of Silicon Nanostructures Obtained from Thermal Annealing of a-Si:H/SiO2 Superlattices
Original language description
This paper reports the synthesis and characterization of silicon quantum dots (QDs) obtained by thermal annealing of hydrogenated amorphous silicon (a-Si:H)/silicon oxide(SiO2) supperlattices deposited by plasma-enhanced chemical vapour deposition (PE-CVD). The asdeposited supperlattices have been annealed in high-temperature vacuum chamber, at temperatures up to 1100 °C, where in-situ phase transformation was monitored by x-ray diffractometry, XRD. It is shown that onset of crystallization and phase separation occur at different annealing temperature depending on the a-Si:H sub-layer thickness. Complete crystallization of the films and precipitation of the QDs occur at 1000 oC.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centre of the New Technologies and Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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