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Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432338" target="_blank" >RIV/68378271:_____/14:00432338 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4885501" target="_blank" >http://dx.doi.org/10.1063/1.4885501</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4885501" target="_blank" >10.1063/1.4885501</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

  • Original language description

    Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution isno longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    104

  • Issue of the periodical within the volume

    25

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    "252108-1"-"252108-4"

  • UT code for WoS article

    000338515900048

  • EID of the result in the Scopus database