Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU124680" target="_blank" >RIV/00216305:26620/17:PU124680 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field
Original language description
Tantalum capacitors have been the preferred capacitor technology in long lifetime electronic devices thanks to the stability of its electric parameters and high reliability. However, long time application of elevated temperature and high electric field can result in capacitor leakage current increase in time. In this paper the effect of ions drift and diffusion at different temperatures on DCL degradation is analysed. DCL vs. time characteristics at temperatures from 65C to 155C were studied in order to determine the parameters of leakage current ageing. Results for four technologies are presented and it is shown that capacitor technology has crucial impact on DCL vs. time characteristics. These experiments are used to determine the background temperature at which DCL degradation starts with respect to the value of electric field. There exists background temperature under which the thermal excitation is not sufficient for give rise to the ions movement. This background temperature is higher than 105C for technology IS4 while for technology IS3 this temperature is 65C only.
Czech name
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Czech description
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Project
<a href="/en/project/LQ1601" target="_blank" >LQ1601: CEITEC 2020</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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