Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU132590" target="_blank" >RIV/00216305:26620/19:PU132590 - isvavai.cz</a>
Alternative codes found
RIV/68081723:_____/19:00510565
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201900279" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201900279</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssb.201900279" target="_blank" >10.1002/pssb.201900279</a>
Alternative languages
Result language
angličtina
Original language name
Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films
Original language description
Epitaxial growth of polar GaN is frequently made on AlN/Si substrates that contain a large density of threading dislocations induced by the mismatch of their lattice parameters and thermal expansion coefficients. In this paper, the structural and electrical properties of surface and extended defects found in 220 nm {0001} AlN films grown epitaxially on {111} oriented Si substrate by metalorganic chemical vapor deposition are characterized. Three types of surface depressions are recognized by atomic force microscopy (AFM) that correspond to V‐defects and their clusters and individual threading dislocations. Transmission electron microscopy studies prove that all V‐defects are attached to threading screw or mixed‐type threading dislocations. The electrical activity of the defects in the AlN film is assessed by measuring the electron beam induced current (EBIC) across Au/Ni/AlN Schottky barrier. The largest drop of EBIC compared to defect‐free regions is observed at clusters of V‐defects, which have a low density of (2.4 ± 0.4) × 107 cm−2. Only a very weak drop of EBIC is found at isolated threading dislocations, which have much higher density compared to clusters of V‐defects. Considering the defects studied, the electrical properties of AlN films are primarily affected by threading dislocations, despite the relatively weak recombination efficiency of individual dislocations.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN
0370-1972
e-ISSN
1521-3951
Volume of the periodical
256
Issue of the periodical within the volume
11
Country of publishing house
DE - GERMANY
Number of pages
7
Pages from-to
1900279-1900279
UT code for WoS article
000503261600032
EID of the result in the Scopus database
2-s2.0-85068517723