Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00510565" target="_blank" >RIV/68081723:_____/19:00510565 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26620/19:PU132590

Result on the web

<a href="https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201900279" target="_blank" >https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.201900279</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201900279" target="_blank" >10.1002/pssb.201900279</a>

Result language

angličtina

Original language name

Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Original language description

Epitaxial growth of polar GaN is frequently made on AlN/Si substrates that contain a large density of threading dislocations induced by the mismatch of their lattice parameters and thermal expansion coefficients. In this paper, the structural and electrical properties of surface and extended defects found in 220 nm {0001} AlN films grown epitaxially on {111} oriented Si substrate by metalorganic chemical vapor deposition are characterized. Three types of surface depressions are recognized by atomic force microscopy (AFM) that correspond to V-defects and their clusters and individual threading dislocations. Transmission electron microscopy studies prove that all V-defects are attached to threading screw or mixed-type threading dislocations. The electrical activity of the defects in the AlN film is assessed by measuring the electron beam induced current (EBIC) across Au/Ni/AlN Schottky barrier. The largest drop of EBIC compared to defect-free regions is observed at clusters of V-defects, which have a low density of (2.4 ± 0.4) × 107 cm−2. Only a very weak drop of EBIC is found at isolated threading dislocations, which have much higher density compared to clusters of V-defects. Considering the defects studied, the electrical properties of AlN films are primarily affected by threading dislocations, despite the relatively weak recombination efficiency of individual dislocations.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Volume of the periodical

256

Issue of the periodical within the volume

11

Country of publishing house

DE - GERMANY

Number of pages

7

Pages from-to

1900279

UT code for WoS article

000503261600032

EID of the result in the Scopus database

2-s2.0-85068517723