Growth of In2O3(111) thin films with optimized surfaces

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU133738" target="_blank" >RIV/00216305:26620/19:PU133738 - isvavai.cz</a>

Result on the web

<a href="https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403" target="_blank" >https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevMaterials.3.103403" target="_blank" >10.1103/PhysRevMaterials.3.103403</a>

Result language

angličtina

Original language name

Growth of In2O3(111) thin films with optimized surfaces

Original language description

Indium oxide is widely employed in applications ranging from optoelectronics and gas sensing to catalysis, as well as in thin-film heterostructures. To probe the fundamentals of phenomena at the heart of In2O3-based devices that are tied to the intrinsic surface and interface properties of the material, well-defined single-crystalline In2O3 surfaces are needed. We report on how to grow atomically flat In2O3(111) thin films on yttria-stabilized zirconia substrates by pulsed laser deposition. The films are largely relaxed and reproduce the atomic-scale details of the surfaces of single crystals, except for line defects originating from the antiphase domain boundaries that form because of the one-on-four lattice match between the surface unit cells of In2O3(111) and of the substrate. While optimizing the growth conditions, we observe that the morphology of the films is ruled by the oxygen chemical potential, which determines the nature and diffusivity of adspecies during growth.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

PHYSICAL REVIEW MATERIALS

ISSN

2475-9953

e-ISSN

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Volume of the periodical

3

Issue of the periodical within the volume

10

Country of publishing house

US - UNITED STATES

Number of pages

10

Pages from-to

103403-103403

UT code for WoS article

000489590000001

EID of the result in the Scopus database

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