TOF-LEIS spectra of Ga/Si: Peak shape analysis
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F07%3APU70352" target="_blank" >RIV/00216305:26210/07:PU70352 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
TOF-LEIS spectra of Ga/Si: Peak shape analysis
Original language description
Low energy ion scattering (LEIS) is used to characterize Ga layers deposited onto Si(111)-(7x7) substrates at different deposition temperatures. The Ga/Si system exhibits a pronounced 3D island growth and thus is a suitable object to investigate the relation between LEIS-peak shapes and the morphology of thin films. It is shown that up to a certain critical depth (a few MLs) the single scattering component can be used as a measure of the number of surface Ga atoms per unit area. If a higher amount of Gais deposited, the single scattering model is not valid anymore and multiple scattering becomes significant. The Ga peak starts to be asymmetric with a well developed multiple scattering component. Such a component can be utilized for the observation ofthe morphology of the layers. It was found that the more intensive the 3D growth of adsorbed Ga atoms on the Si(111) substrate, the more pronounced is the multiple scattering yield for a given amount of Ga.
Czech name
TOF-LEIS spektra Ga/Si: analýza tvaru píku.
Czech description
TOF-LEIS spektra Ga/Si: analýza tvaru píku.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments and Methods in Physics Research B
ISSN
0168-583X
e-ISSN
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Volume of the periodical
265
Issue of the periodical within the volume
2
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
7
Pages from-to
569-575
UT code for WoS article
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EID of the result in the Scopus database
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