Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU134926" target="_blank" >RIV/00216305:26620/19:PU134926 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S0169433219325024" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433219325024</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2019.143705" target="_blank" >10.1016/j.apsusc.2019.143705</a>

Result language
angličtina
Original language name
Low temperature selective growth of GaN single crystals on pre-patterned Si substrates
Original language description
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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