Preparation of GaN Nanocrystals with Single Ag Cores
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155540" target="_blank" >RIV/00216305:26620/24:PU155540 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28110/24:63580162
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776" target="_blank" >https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.cgd.4c00776" target="_blank" >10.1021/acs.cgd.4c00776</a>
Alternative languages
Result language
angličtina
Original language name
Preparation of GaN Nanocrystals with Single Ag Cores
Original language description
We report on a low-temperature hybrid method for the preparation of GaN nanocrystals (NCs) with embedded single Ag cores. GaN growth is realized by a physical vapor deposition of Ga atoms on a SiO2 substrate with colloidal Ag nanoparticles on its surface, assisted with an ultralow energy (50 eV) nitrogen-ion-beam bombardment at temperatures being significantly lower (T < 350 degrees C) than in conventional GaN deposition techniques (e.g., MOCVD, 1000 degrees C). We call this method Low Temperature Droplet Epitaxy (LTDE). The low deposition temperature allows GaN nanocrystals to be prepared with embedded metal-aluminum colloidal nanoparticles as their cores. A combination of STEM, SEM, scanning Auger microscopy, XPS, and AFM was applied to characterize semiconductor and metal nanoparticles. By their implementation, we optimized morphology, structure, and chemical composition of these nanocrystals and, consequently, demonstrated their enhanced photoluminescent properties.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
<a href="/en/project/GA20-28573S" target="_blank" >GA20-28573S: Localized plasmon-enhanced absorption upon strong coupling</a><br>
Continuities
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Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Growth and Design
ISSN
1528-7483
e-ISSN
1528-7505
Volume of the periodical
24
Issue of the periodical within the volume
19
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
7904-7909
UT code for WoS article
001311346100001
EID of the result in the Scopus database
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