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Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU145296" target="_blank" >RIV/00216305:26620/22:PU145296 - isvavai.cz</a>

  • Alternative codes found

    RIV/70883521:28110/22:63554898

  • Result on the web

    <a href="https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1039/d2na00175f" target="_blank" >10.1039/d2na00175f</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

  • Original language description

    As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    NANOSCALE ADVANCES

  • ISSN

    2516-0230

  • e-ISSN

  • Volume of the periodical

    1

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

    1-8

  • UT code for WoS article

    000834531700001

  • EID of the result in the Scopus database

    2-s2.0-85135510985