Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU145296" target="_blank" >RIV/00216305:26620/22:PU145296 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28110/22:63554898
Result on the web
<a href="https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d2na00175f" target="_blank" >10.1039/d2na00175f</a>
Alternative languages
Result language
angličtina
Original language name
Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions
Original language description
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
NANOSCALE ADVANCES
ISSN
2516-0230
e-ISSN
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Volume of the periodical
1
Issue of the periodical within the volume
1
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
1-8
UT code for WoS article
000834531700001
EID of the result in the Scopus database
2-s2.0-85135510985