Growth and properties of GaN and AlN layers on silver substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F05%3A00013775" target="_blank" >RIV/60461373:22310/05:00013775 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Growth and properties of GaN and AlN layers on silver substrates
Original language description
We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakagecurrent (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.
Czech name
Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech
Czech description
Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA104%2F03%2F0387" target="_blank" >GA104/03/0387: Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
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Issue of the periodical within the volume
87
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
212109
UT code for WoS article
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EID of the result in the Scopus database
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