Study of ALD Grown Multilayers Exhibiting Vacancy Induced Conductivity for Electron Emitters

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155972" target="_blank" >RIV/00216305:26620/24:PU155972 - isvavai.cz</a>
Alternative codes found
RIV/68081731:_____/24:00617488
Result on the web
<a href="https://ieeexplore.ieee.org/document/10652514" target="_blank" >https://ieeexplore.ieee.org/document/10652514</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/IVNC63480.2024.10652514" target="_blank" >10.1109/IVNC63480.2024.10652514</a>

Result language
angličtina
Original language name
Study of ALD Grown Multilayers Exhibiting Vacancy Induced Conductivity for Electron Emitters
Original language description
Thin oxide multilayers are prepared using low-temperature atomic layer deposition (ALD). The tungsten samples are coated with a multilayer stacks of refractory oxides: Al2O3, TiO2, VO2, and HfO2. The properties of the multilayer oxide are controlled by the number of ALD growth cycles, which affects the thickness of the individual layers. The grown layers of dielectrics are usually amorphous. The contaminants present in the ALD chamber also affect the properties of the final multilayer. Tuning the multilayer stack thickness and composition may result in non-conventional effects on field emission from the sharp needle underneath the dielectric layer. Such effects may be oxygen-vacancy-induced conductivity, effects due to polarization of the dielectric or plamonic carrier generation in the case of photon-assisted field emission.
Czech name
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Czech description
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Project
<a href="/en/project/LM2018110" target="_blank" >LM2018110: CzechNanoLab research infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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