U.S. Patent 9,099,481: Methods of laser marking semiconductor substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F15%3A%230000089" target="_blank" >RIV/26821532:_____/15:#0000089 - isvavai.cz</a>
Result on the web
<a href="http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9,099,481.PN.&OS=PN/9,099,481&RS=PN/9,099,481" target="_blank" >http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9,099,481.PN.&OS=PN/9,099,481&RS=PN/9,099,481</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
U.S. Patent 9,099,481: Methods of laser marking semiconductor substrates
Original language description
The present application relates, in general, to electronics, and more particularly, to semiconductors, structures thereof, and methods of forming semiconductor devices. In the past, the semiconductor industry has utilized various methods to form semiconductor devices. Semiconductor wafers can be used as the substrates for production of semiconductor devices. A substrate wafer can be made of a bulk semiconductor material such as silicon or a bulk material with a top layer, for example deposited using a homo- or hetero-epitaxial deposition process, or a wafer bonding process. Semiconductor substrates can be processed in highly-automated wafer fabs that use identification of each wafer. Also, engineering tests may have required additional identification of the processed wafers. Such identification can be provided with laser scribing on the wafer. A laser beam can be used to locally melt the material and thereby a visible "spot" was produced. From such spots symbols can be created. In some
Czech name
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Czech description
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Classification
Type
P - Patent
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/TA01010078" target="_blank" >TA01010078: SOI Structures for Advanced Semiconductor Applications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Patent/design ID
US001 9,099,481
Publisher
US001 -
Publisher name
United States Patent and Trademark Office (USPTO)
Place of publication
Alexandria
Publication country
US - UNITED STATES
Date of acceptance
Apr 4, 2015
Owner name
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Method of use
A - Výsledek využívá pouze poskytovatel
Usage type
A - K využití výsledku jiným subjektem je vždy nutné nabytí licence