Atomic force microscopy study of SnO2 thin films for gas sensor

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13430%2F02%3A00001972" target="_blank" >RIV/44555601:13430/02:00001972 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Atomic force microscopy study of SnO2 thin films for gas sensor

Original language description

The SnO2 thin films are widely used for gas sensor applications. In this work we have studied properties of SnO2 thin films produced by thermal evaporation of Sn films followed by in situ plasma oxidation. The structure of such SnO2 films and also theirchemical and physical properties depend on parameters governing the growth of these films during plasma oxidation, e.g. on both the plasma parameters and the substrate temperature. The effects of annealing modification of SnO2 films on the surface structure, composition, and electrical conductance of SnO2 films were studied.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

<a href="/en/project/OC%20527.50" target="_blank" >OC 527.50: Polymer Thin Films Study by AFM and Improvement of Plasma Diagnostics Methods</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

National Conference NANO 02

ISBN

80-7329-027-8

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

270-273

Publisher name

Repronis

Place of publication

Ostrava

Event location

Brno

Event date

Nov 19, 2002

Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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