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Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F17%3A43892828" target="_blank" >RIV/44555601:13440/17:43892828 - isvavai.cz</a>

  • Alternative codes found

    RIV/49777513:23520/17:43932094 RIV/49777513:23640/17:43932094

  • Result on the web

    <a href="http://www.sciencedirect.com/science/article/pii/S0040609017301062" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609017301062</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.tsf.2017.02.017" target="_blank" >10.1016/j.tsf.2017.02.017</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices

  • Original language description

    The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indiumtin oxide films by an aluminiumzinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100?/sq. The investigated AZO films with thickness up to 300 nmwere deposited on 150 ?mthick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering froma ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160 nm and sheet resistance lower than 100?/sq.were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    2017

  • Issue of the periodical within the volume

    634

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

    169-174

  • UT code for WoS article

    000404802600023

  • EID of the result in the Scopus database