Surface semiconductor phenomena in ferroelectrics

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F12%3A%230002170" target="_blank" >RIV/46747885:24220/12:#0002170 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Surface semiconductor phenomena in ferroelectrics
Original language description
Free ferroelectric surface has been for a long time considered as a source of strong depolarizing field, which is generated by bound charge, when spontaneous polarization has nonzero normal component at the surface of the ferroelectric. In parallel, it was frequently considered that the bound charges are compensated mainly by ions from surrounding environment or by accumulation of charged defects from inside the ferroelectric. The recent observations of domain wall conductivity [Seidel J, et al, NatureMaterials 8, 229 (2009)] and conductivity of free surfaces [Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)] revealed the essential role of semiconductor properties of ferroelectrics in the process of the bound charge compensation by intrinsic free-charge carriers. In this work, the intrinsic screening mechanism of the bound charge on the free ferroelectric surface by electrons and holes is studied by means of phase field simulation based on Landau-Ginzburg-Devoshire theory. The effect
Czech name
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Czech description
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Project
<a href="/en/project/GAP204%2F10%2F0616" target="_blank" >GAP204/10/0616: Modern piezoelectric perovskites: lattice vibrations and domain walls</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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