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Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique

Result description

Investigation of hydrogenated microcrystalline silicon (microc-Si:H) thin films for solar cells deposited at very low substrate temperatures is motivated by further reduction of the energy budget and a possibility to use practical polymer substrates. Wehave applied the surface photovoltage (SPV) technique in an expanded spectral region (1.2?3 eV) to study transport properties of microc-Si:H thin films deposited at substrate temperatures between 35 and 200 °C. The application of the SPV technique revealed new phenomena of low-temperature microc-Si:H growth (e.g. formation of a bottom barrier for deposition temperatures below 100 °C, presence of a defective layer for deposition temperatures 75?200 °C) without performing any additional measurementswas detected even for the sample thickness less than 0.5 microm. By increasing the deposition temperature, a transition from the amorphous to microcrystalline growth was crossed. However, it seems not to be sharp?the experimental data indicate

Keywords

low temperature silicon growthpolymer substratessurface photovoltage methodspace charge region

The result's identifiers

Alternative languages

  • Result language

    angličtina

  • Original language name

    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique

  • Original language description

    Investigation of hydrogenated microcrystalline silicon (microc-Si:H) thin films for solar cells deposited at very low substrate temperatures is motivated by further reduction of the energy budget and a possibility to use practical polymer substrates. Wehave applied the surface photovoltage (SPV) technique in an expanded spectral region (1.2?3 eV) to study transport properties of microc-Si:H thin films deposited at substrate temperatures between 35 and 200 °C. The application of the SPV technique revealed new phenomena of low-temperature microc-Si:H growth (e.g. formation of a bottom barrier for deposition temperatures below 100 °C, presence of a defective layer for deposition temperatures 75?200 °C) without performing any additional measurementswas detected even for the sample thickness less than 0.5 microm. By increasing the deposition temperature, a transition from the amorphous to microcrystalline growth was crossed. However, it seems not to be sharp?the experimental data indicate

  • Czech name

  • Czech description

Classification

  • Type

    Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    Volumes 45

  • Issue of the periodical within the volume

    20040322

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    5

  • Pages from-to

    408-412

  • UT code for WoS article

  • EID of the result in the Scopus database

Basic information

Result type

Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

Jx

CEP

BM - Solid-state physics and magnetism

Year of implementation

2004