Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49610040%3A_____%2F04%3A00000007" target="_blank" >RIV/49610040:_____/04:00000007 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/04:00100334 RIV/49610040:_____/05:00000035

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique

Original language description

Investigation of hydrogenated microcrystalline silicon (microc-Si:H) thin films for solar cells deposited at very low substrate temperatures is motivated by further reduction of the energy budget and a possibility to use practical polymer substrates. Wehave applied the surface photovoltage (SPV) technique in an expanded spectral region (1.2?3 eV) to study transport properties of microc-Si:H thin films deposited at substrate temperatures between 35 and 200 °C. The application of the SPV technique revealed new phenomena of low-temperature microc-Si:H growth (e.g. formation of a bottom barrier for deposition temperatures below 100 °C, presence of a defective layer for deposition temperatures 75?200 °C) without performing any additional measurementswas detected even for the sample thickness less than 0.5 microm. By increasing the deposition temperature, a transition from the amorphous to microcrystalline growth was crossed. However, it seems not to be sharp?the experimental data indicate

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

Volumes 45

Issue of the periodical within the volume

20040322

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

408-412

UT code for WoS article

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EID of the result in the Scopus database

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