Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
Result description
Investigation of hydrogenated microcrystalline silicon (microc-Si:H) thin films for solar cells deposited at very low substrate temperatures is motivated by further reduction of the energy budget and a possibility to use practical polymer substrates. Wehave applied the surface photovoltage (SPV) technique in an expanded spectral region (1.2?3 eV) to study transport properties of microc-Si:H thin films deposited at substrate temperatures between 35 and 200 °C. The application of the SPV technique revealed new phenomena of low-temperature microc-Si:H growth (e.g. formation of a bottom barrier for deposition temperatures below 100 °C, presence of a defective layer for deposition temperatures 75?200 °C) without performing any additional measurementswas detected even for the sample thickness less than 0.5 microm. By increasing the deposition temperature, a transition from the amorphous to microcrystalline growth was crossed. However, it seems not to be sharp?the experimental data indicate
Keywords
low temperature silicon growthpolymer substratessurface photovoltage methodspace charge region
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/68378271:_____/04:00100334 RIV/49610040:_____/05:00000035
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
Original language description
Investigation of hydrogenated microcrystalline silicon (microc-Si:H) thin films for solar cells deposited at very low substrate temperatures is motivated by further reduction of the energy budget and a possibility to use practical polymer substrates. Wehave applied the surface photovoltage (SPV) technique in an expanded spectral region (1.2?3 eV) to study transport properties of microc-Si:H thin films deposited at substrate temperatures between 35 and 200 °C. The application of the SPV technique revealed new phenomena of low-temperature microc-Si:H growth (e.g. formation of a bottom barrier for deposition temperatures below 100 °C, presence of a defective layer for deposition temperatures 75?200 °C) without performing any additional measurementswas detected even for the sample thickness less than 0.5 microm. By increasing the deposition temperature, a transition from the amorphous to microcrystalline growth was crossed. However, it seems not to be sharp?the experimental data indicate
Czech name
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Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
Volumes 45
Issue of the periodical within the volume
20040322
Country of publishing house
GB - UNITED KINGDOM
Number of pages
5
Pages from-to
408-412
UT code for WoS article
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EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2004