Electrical properties of PEDOT

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F09%3A00501573" target="_blank" >RIV/49777513:23220/09:00501573 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electrical properties of PEDOT

Original language description

This article deals with electric properties of metal-organic semiconductor junction. Different types of substrates were used for measurement of electrical parameters of poly(3,4-ethylenedioxythiophene) (PEDOT). On these substrates, the thick layer of PEDOT was created. Current-voltage characteristics were measured to find-out if Schottky barrier on the metal-semiconductor junction is created. Then frequency characteristics were measured to obtain an equivalent circuit of this system.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ISSE2009

ISBN

978-1-4244-4260-7

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

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Publisher name

IEEE

Place of publication

Piscataway

Event location

Brno

Event date

May 17, 2009

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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