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Ageing of Semiconductor Single Crystals and Metal-Semiconductor Junctions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU74425" target="_blank" >RIV/00216305:26220/08:PU74425 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Ageing of Semiconductor Single Crystals and Metal-Semiconductor Junctions

  • Original language description

    CdTe radiation detectors resistance were periodically measured during long time interval with an applied voltage in range U=1V to U=30V. In 1,5 years of measurements we observed the aging of the homogenous semiconductor and metal-semiconductor junction.The resistance of the semiconductor increased significantly. The metal-semiconductor junction working in forward bias had much higher value of voltage drop than it must have had. Volt-ampere characteristics were not stable and significantly changed in small periods of time. Dependence of the resistance also was unstable.

  • Czech name

    Stárnuti polovodičových monokrystalů a přechodů kov - polovodič

  • Czech description

    CdTe radiation detectors resistance were periodically measured during long time interval with an applied voltage in range U=1V to U=30V. In 1,5 years of measurements we observed the aging of the homogenous semiconductor and metal-semiconductor junction.The resistance of the semiconductor increased significantly. The metal-semiconductor junction working in forward bias had much higher value of voltage drop than it must have had. Volt-ampere characteristics were not stable and significantly changed in small periods of time. Dependence of the resistance also was unstable.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    ISSE 2008 Reliability and Life-time Prediction

  • ISBN

    978-963-06-4915-5

  • ISSN

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

  • Publisher name

    Zsolt Illyefalvi-Vitez

  • Place of publication

    Budapest, Hungary

  • Event location

    Budapest

  • Event date

    May 7, 2008

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article