Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F19%3A43955504" target="_blank" >RIV/49777513:23220/19:43955504 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8781249" target="_blank" >https://ieeexplore.ieee.org/document/8781249</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISIE.2019.8781249" target="_blank" >10.1109/ISIE.2019.8781249</a>

Result language
angličtina
Original language name
Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation
Original language description
This paper deals with the verification of the maximum current rating of MOSFET transistors in a discrete package TO-247AC. The main motivation for this analysis was the redesign of AC power drive chain for electric go kart with three phase power converter of the output nominal power 10kW, a supply voltage 48V and minimal switching frequency 50kHz. The inverter must be able to operate with short-term current overload up to 450A. A parallel combination of three power transistors is used to design the basic power switch. The HEXFET Power MOSFET transistor (IRFP4468PdF in a discrete case TO-247AC) was chosen as a basic structural element. We used DC analysis to verify the proper ies and imits of the discrete case TO-247AC. The maximum rated current through the MOSFET transistor was determined with respect to the maximum chip temperature and enclosure limitation. In order to accurately verify the measuring results f transistor temperature, a thermo-camera was used (the color is used to define the emissivity of measured object with reference ε = 0,9). Temperature was also measured by a thermometer PT100 sensor and estimated from the forward voltage on freewheeling diode.
Czech name
—
Czech description
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Project
<a href="/en/project/EF18_069%2F0009855" target="_blank" >EF18_069/0009855: Electrical Engineering Technologies with High-Level of Embedded Intelligence</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE 2019)
ISBN
978-1-72813-666-0
ISSN
2163-5137
e-ISSN
2163-5145
Number of pages
6
Pages from-to
1014-1019
Publisher name
IEEE
Place of publication
Piscataway
Event location
Vancouver, BC, Canada
Event date
Jun 12, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000500998700152

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