High-speed switch based on MOSFETs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00300823" target="_blank" >RIV/68407700:21230/16:00300823 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

High-speed switch based on MOSFETs

Original language description

This article describes both the design and construction of the switch that enables switching with a high di/dt rate and a special type of a shunt for measuring current. A designed circuit is based on a parallel connection of high power MOSFET transistors with independent drivers. Negative influence of parasitic inductions of transistor leads was analyzed. Film capacitor testing is based on applying a very fast discharging process. Current and voltage waveforms arising during the measurement are used to create an equivalent circuit of the capacitor.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ISPS'16 PROCEEDINGS

ISBN

978-80-01-05998-2

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

177-182

Publisher name

Česká technika - nakladatelství ČVUT

Place of publication

Praha

Event location

Praha

Event date

Aug 31, 2016

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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