HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F15%3A43926879" target="_blank" >RIV/49777513:23520/15:43926879 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS
Original language description
The present invention overcomes the well-known problems of reactive magnetron sputtering, even when high power impulse magnetron sputtering a metal target is used, by providing a reactive sputtering processing system and method that controls a pulsed reactive gas flow rate into a vacuum chamber at a constant target voltage, kept by a power supply, to promote a high-rate deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode. For a giventarget material and reactive process gas, one of the two process parameters (namely, the target current, alternatively the average target current in a period of a pulsed power supply, or the reactive gas partial pressure in the vacuum chamber), which are simultaneously monitored in time by a process controller, is selected as a control process parameter. For a given nominal target power, and the target material and the reactive process gas, an optimized constant target voltage, non-reac
Czech name
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Czech description
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Classification
Type
P - Patent
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Patent/design ID
EP2770083
Publisher
EPO_1 -
Publisher name
European Patent Office
Place of publication
Munich, The Hague, Berlin, Vienna, Brussels
Publication country
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Date of acceptance
Nov 18, 2015
Owner name
Západočeská univerzita v Plzni, TRUMPF Huettinger Sp. Z o. o.
Method of use
B - Výsledek je využíván orgány státní nebo veřejné správy
Usage type
A - K využití výsledku jiným subjektem je vždy nutné nabytí licence