HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43949821" target="_blank" >RIV/49777513:23520/17:43949821 - isvavai.cz</a>
Result on the web
<a href="http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9637814" target="_blank" >http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9637814</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS
Original language description
The present invention overcomes the well-known problems of reactive magnetron sputtering, even when high power impulse magnetron sputtering a metal target is used, by providing a reactive sputtering processing system and method that controls a pulsed reactive gas flow rate into a vacuum chamber at a constant target voltage, kept by a power supply, to promote a high-rate deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode. For a given target material and reactive process gas, one of the two process parameters (namely, the target current, alternatively the average target current in a period of a pulsed power supply, or the reactive gas partial pressure in the vacuum chamber), which are simultaneously monitored in time by a process controller, is selected as a control process parameter. For a given nominal target power, and the target material and the reactive process gas, an optimized constant target voltage, non-reactive gas (argon) partial pressure, total reactive gas flow rate into the vacuum chamber and configuration of the reactive gas conduit system, together with a critical value of the control process parameter selected, are determined empirically using the apparatus controlling the reactive sputtering process on the basis of the sensed time-dependent values of the control parameter. This determination is based on measurements of the deposition rates and characterization of the films deposited. The critical value of the control parameter defines a range of the reactive gas partial pressure in the chamber through the controlled pulsed reactive gas flow rate into the chamber allowing to perform a stabilized high-rate reactive magnetron deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode.
Czech name
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Czech description
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Classification
Type
P - Patent
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Patent/design ID
US9637814
Publisher
US001 -
Publisher name
United States Patent and Trademark Office (USPTO)
Place of publication
Alexandria
Publication country
US - UNITED STATES
Date of acceptance
May 2, 2017
Owner name
Západočeská univerzita v Plzni, TRUMPF Huettinger Sp. Z o. o.
Method of use
B - Výsledek je využíván orgány státní nebo veřejné správy
Usage type
A - K využití výsledku jiným subjektem je vždy nutné nabytí licence