Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F20%3A43960222" target="_blank" >RIV/49777513:23520/20:43960222 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23520/21:43963209
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films
Original language description
In this work, we first use a substrate holder at a floating potential to demonstrate that bipolar HiPIMS cannot be used instead of a DC substrate bias voltage for deposition of non-conductive films or deposition onto non-conductive substrates, due to charging and the loss of a plasma-substrate potential difference, necessary for ion acceleration. However, when the substrate holder is grounded, there is an apparent evolution in crystal structure, microstructure and mechanical properties of the CrN films with increasing positive pulse voltage. We compare the effect of the positive pulse voltage in bipolar HiPIMS with the effect of a standard DC bias voltage applied to the substrate holder in unipolar HiPIMS. We find that the effects are different, mainly due to differences in energies delivered into the growing film by bombarding ions. The most interesting properties, namely high hardness (23.5 and 23.1 Pa) at a relatively low residual stress are achieved for films prepared using bipolar HiPIMS with a grounded substrate holder at positive pulse voltages of 90 and 120 V, respectively.
Czech name
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Czech description
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Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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