Microstructure of High Temperature Oxidation Resistant Hf6B10Si31C2N50 and Hf7B10Si32C2N44 Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F20%3A43960270" target="_blank" >RIV/49777513:23520/20:43960270 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.3390/coatings10121170" target="_blank" >https://doi.org/10.3390/coatings10121170</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/coatings10121170" target="_blank" >10.3390/coatings10121170</a>
Alternative languages
Result language
angličtina
Original language name
Microstructure of High Temperature Oxidation Resistant Hf6B10Si31C2N50 and Hf7B10Si32C2N44 Films
Original language description
High-temperature oxidation resistant amorphous Hf6B10Si31C2N50 and Hf7B10Si32C2N44 films were deposited by reactive pulsed dc magnetron sputtering. To investigate the oxidation mechanism, the films were annealed up to 1500 °C in air. The evolved microstructures were studied by X-ray diffraction and transmission electron microscopy. A three-layered microstructure was developed upon exposure to high temperature. An oxidized layer formed at the top surface for both films consisting of monoclinic and/or orthorhombic m-/o-HfO2 nanoparticles embedded in an amorphous SiOx-based matrix. The as-deposited bottom layer of the films remained amorphous (Hf6B10Si31C2N50) or partially recrystallized (Hf7B10Si32C2N44) exhibiting a h-Si3N4 and HfCxN1−x distribution along with formation of t-HfO2 at its top section. The two layers were separated by a partially oxidized transition layer composed of nanocrystalline h-Si3N4 and tetragonal t-HfO2. The oxidation process initiates at the bottom/transition layer interface with oxidation of Hf-rich domains either in the amorphous structure or in HfCxN1−x nanoparticles resulting in t-HfO2 separated by Si3N4 domains. The second stage occurs at the oxidized/transition layer interface characterized by densely packed HfO2, Si3N4 and quartz SiO2 nanostructures that can act as a barrier for oxygen diffusion. The small t-HfO2 nanoparticles merge and transform into large m-/o-HfO2 while h-Si3N4 forms amorphous SiOx matrix. A similar oxidation mechanism was observed in both films despite the different microstructures developed.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/EF17_048%2F0007267" target="_blank" >EF17_048/0007267: Research and Development of Intelligent Components of Advanced Technologies for the Pilsen Metropolitan Area (InteCom)</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Coatings
ISSN
2079-6412
e-ISSN
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Volume of the periodical
10
Issue of the periodical within the volume
12
Country of publishing house
CH - SWITZERLAND
Number of pages
17
Pages from-to
„1170-1“-„1170-17“
UT code for WoS article
000602140200001
EID of the result in the Scopus database
2-s2.0-85097289787