Preparation of tungsten oxide thin films using reactive HiPIMS: Process and material

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F21%3A43962633" target="_blank" >RIV/49777513:23520/21:43962633 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preparation of tungsten oxide thin films using reactive HiPIMS: Process and material
Original language description
Nowadays, tungsten oxide is widely studied as a promising material for hydrogen gas sensing, electrochromic or photocatalytic applications. However, there are only few works focused on utilization of reactive HiPIMS (high-power impulse magnetron sputtering) process for WOx films preparation. Despite the fact, reactive HiPIMS could enhance deposition rate or allow to prepare quality oxide films at low temperature. In this work, we present results obtained during reactive HiPIMS deposition of thin WOx film with different stoichiometry and structure. Effect of oxygen partial pressure, value of pulse-averaged target power density and pulse length will be discussed. Results obtained from an improved version of our global model of reactive HiPIMS will be also presented. Hydrogen sensing response will be shown for selected films. It is demonstrated, sensitivity towards hydrogen gas is highly increased for a proper nanostructure.
Czech name
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Czech description
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Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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